Optimization of HFO2 thin films for gate dielectric applications in 2-D layered materials (Record no. 191322)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 00604nam a2200193Ia 4500 |
| 082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER | |
| Classification number | 621.3973201546514 |
| Item number | P14 |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Ganapathi K Lakshmi |
| 245 ## - TITLE STATEMENT | |
| Title | Optimization of HFO2 thin films for gate dielectric applications in 2-D layered materials |
| Statement of responsibility, etc. | by Lakshmi Ganapathi K |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. | |
| Place of publication, distribution, etc. | Bangalore |
| Name of publisher, distributor, etc. | IISc, Dept of AP PhD Thesis |
| Date of publication, distribution, etc. | 2014 |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | xxv, 158p. |
| 500 ## - GENERAL NOTE | |
| General note | Includes CD |
| 690 ## - LOCAL SUBJECT ADDED ENTRY--TOPICAL TERM (OCLC, RLIN) | |
| Topical term or geographic name as entry element | Hafnium dioxide (HfO2); Metal oxide semiconductor devices; Layer materials |
| 919 ## - | |
| -- | 191896 |
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