000 | 00604nam a2200193Ia 4500 | ||
---|---|---|---|
919 | _a206851 | ||
082 |
_a620 _bSAY/P |
||
100 |
_aDutta Gupta, Sayak _d |
||
245 |
_aPhysics-based approach for efficient & reliable enhancement-mode AlGaN/GaN high electron mobility transistor (HEMT) technology _b _cby Sayak Dutta Gupta; advised by Mayank Shrivastava |
||
260 |
_aBengaluru _bIISc _c2022 |
||
300 |
_axxxix, 237p. _b _c _e |
||
500 | _aincludes bibliographic reference and index | ||
502 | _aPhD; IISc; 2022 | ||
650 | _aHigh Electron Mobility Transistor (HEMT) | ||
650 | _asemiconductor devices | ||
650 | _aEnhancement Mode HEMTs | ||
720 | _aShrivastava, Mayank advised | ||
856 |
_dhttps://etd.iisc.ac.in/handle/2005/5858 _f |
||
964 |
_a _ben _c _d _ee-Thesis _fhttps://etd.iisc.ac.in/handle/2005/5858 _g |
||
999 |
_c206205 _d206205 |