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1.
Studies on LBT based on MOSFET and its parasitic transistor in a CMOS IC by Renu, M. R. by Series: IISc, Dept of ECE, MSc Thesis
Material type: Text Text
Publication details: Bangalore Indian Institute of Science 1997
Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 621.3815284 N971 "THESIS".

2.
MOSFET modeling with spice principles and practice by Daniel P. Foty by
Material type: Text Text
Publication details: New Jersey Prentie-Hall 1997
Availability: Items available for loan: Electrical Communication Engineering (1)Call number: 621.3815284 N97.

3.
VLSI Technology. VLSI 2004. Digest of technical papers by
Material type: Text Text
Publication details: Piscataway IEEE 2004
Availability: Items available for loan: JRD Tata Memorial Library (1)Call number: 621.395 P041 "SER".

4.
Device Electronics for Integrated Circuits by Richard S Muller and Theodore I Kamins by
Edition: 3rd ed
Material type: Text Text
Publication details: New York Exclusive rights by John Wiley & Sons 2003
Availability: Items available for loan: JRD Tata Memorial Library (1)Call number: 621.38152 P0314 R(T).

5.
MOS(Metal Oxide Semiconductor) physics and technology by E H Nicollian and J R Brews by
Material type: Text Text
Publication details: New Jersey John Wiley 2003
Availability: Items available for loan: JRD Tata Memorial Library (1)Call number: 621.38152 P0316.

6.
MOS(Metal Oxide Semiconductor) Physics and Technology by E H Nicollian and J R Brews by
Material type: Text Text
Publication details: New Jersey Wiley 2003
Availability: Items available for loan: JRD Tata Memorial Library (1)Call number: 621.38152 P0316;1 R(T).

7.
On the modeling of invention charge in multi-gate finFET by Avinash Sahoo by Series: IISc, Dept.of CEDT, MSc Thesis
Material type: Text Text
Publication details: Bangalore IISc 2009
Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 621.381528 P093 "THESIS".

8.
MOS(Metal Oxide Semiconductor) Physics and Technology by E H Nicollian and J R Brews by
Material type: Text Text
Publication details: New Jersey Wiley 2003
Availability: Items available for loan: Materials Research Centre (1)Call number: 621.38152 P0316;2 (MRC).

9.
Compact modeling of asymmetric/independent double gate MOSFET by J Srivatsava by Series: IISc, Dept. of ESE. PhD Thesis
Material type: Text Text
Publication details: Bangalore IISc 2012
Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 621.381528 P12 "THESIS".

10.
Advanced power MOSFET concepts by B Jayant Baliga by
Material type: Text Text
Publication details: New York Springer 2010
Availability: Items available for loan: JRD Tata Memorial Library (1)Call number: 621.3815284 P10;2.

11.
Compact modeling of short channel common double gate MOSFET adapted to gate-oxide thickness asymmetry by Neha Sharan by Series: IIsc Dept. of ESE PhD Thesis ;
Material type: Text Text
Publication details: Bangalore IISc 2014
Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 621.3815284 P14 (THESIS).

12.
Atomistic study of carrier transmission in hetero-phase MoS2 structures by Dipankar Saha by
Material type: Text Text
Publication details: Bangalore IISc 2017
Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 620.50154653 P17 (THESIS).

13.
Study on optical and electrical transport properties of twisted bilayer transition metal dichalcogenides by Rahul Debnath; advised by Arindam Ghosh by
Material type: Text Text
Publication details: Bengaluru IISc 2022
Dissertation note: PhD; IISc; 2022
Online resources:
Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 530 RAH/S.

14.
Characterization and modelling of switching dynamics of SiC MOSFETs by Shamibrota Roy; advised by Kaushik Basu by
Material type: Text Text
Publication details: Bengaluru IISc 2022
Dissertation note: PhD; IISc; 2022
Online resources:
Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 620 SHM/C.

15.
Electronic devices using low-dimensional van der waals materials and their heterojunctions / by
Material type: Text Text; Format: print ; Literary form: Not fiction
Language: en
Publication details: Bangalore : Indian Institute of Science, 2024
Dissertation note: PhD;2024;Electrical Communication Engineering
Online resources:
Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 621.381 PUS.

16.
Physics-Informed Neural Network-Based Solution for the Poisson-Boltzmann Equation in an Independent Double-Gate MOSFET / by
Material type: Text Text; Format: print ; Literary form: Not fiction
Language: en
Publication details: Bengaluru : Indian Institute of Science, 2025
Dissertation note: MTech (Res) ; 2025 ; Electronic Systems Engineering
Online resources:
Availability: Items available for reference: JRD Tata Memorial Library: Not For Loan (1)Call number: 621.381 RAM.

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