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	1.	No cover image available Facil and process compatible growth of high-k gate dielectric materials (TiO2, ZrO2 and HfO2) on Si and the Investigation of these oxides and thier interfaces by deep level transient spectroscopy by Arvind Kumar by Kumar, Arvind, Koteswara Rao, K.S.R Material type: Text Publication details: Bangalore IISc 2016 Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 620.2977 P16 (THESIS).
	2.	No cover image available Investigations on deep-level defects in HgTe nanocrystals-based photovoltaic devices using a novel instrumentation for deep level transient spectroscopy by Sreeshma, D Koteswara Rao, K S R advised Mallik, Ramesh Chandra advised Material type: Text; Format: print ; Literary form: Not fiction Language: en Publication details: Bangalore : IISc , 2023 Dissertation note: PhD; 2023; Physics Online resources: Click here to access online Availability: Items available for loan: JRD Tata Memorial Library (1)Call number: 530 SRE. Place hold

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