Spectral analysis of conductance fluctuations in doped silicon near the Mott- Anderson transition by Swastik Kar

By: Contributor(s): Material type: TextTextPublication details: Bangalore : Indian Institute of Science, 2003.Description: 175 p. : illSubject(s): DDC classification:
  • 537.62 P03
Dissertation note: PhD;2003;Physics.
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Thesis Thesis JRD Tata Memorial Library 537.62 P03 (Browse shelf(Opens below)) Not for loan T05468

Includes bibliography.

PhD;2003;Physics.

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