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1.
Studies on capacitive, conductance and interface properties of silicon and silicon carbide MOS structures / by Nagaraj Brindha. by
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Bangalore : Indian Institute of Science, 1975
Dissertation note: PhD;1975;Physics.
Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 537.622 N75.

2.
Design and construction of a pulsed high magnetic field facility and high field magnetoresistance studies in some semiconductors by S. Nagabhushana. by
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Bangalore : Indian Institute of Science, 1975
Dissertation note: PhD;1975;Physics.
Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 537.622 N75.

3.
Study of the low intensity differential photocapacitance effect on mos structures by S. Mohan Chandra. by
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Bangalore : Indian Institute of Science, 1980
Dissertation note: PhD;1980;Physics.
Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 537.54 N80.

4.
Studies on reactive characteristics of reverse biased germanium PN juctions near the breakdown region by Suhha Mahadevan. by
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Bangalore : Indian Institute of Science, 1968
Dissertation note: PhD;1968;Physics.
Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 537.622 N68.

5.
Studies on the preparation and semiconductor properties of clad silcon fibres Mallika,Verma by
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Bangalore : Indian Institute of Science, 1985
Dissertation note: PhD;1985;Physics.
Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 537.622 N85.

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