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	1.	No cover image available Deeply scaled In AlN/GaN-on-silicon high electron mobility transistors for RF applications by Charan Vanjari, Sai advised by Nath, Digbijoy N and Raghavan, Srinivasan Material type: Book; Format: print ; Literary form: Not fiction Publication details: Bangalore : Indian Institute of Science, 2022 Dissertation note: PhD; 2022; Centre for Nano Science and Engineering Online access: Click here to access online Availability: Items available for reference: JRD Tata Memorial Library: Not For Loan (1)Call number: 621.381 CHA.
	2.	No cover image available Development and Characterization of Multi-finger GaN HEMT for Power switching applications by Baby, Rijo Advised by Raghavan, Srinivasan Advised by Nath, Digbijoy N Material type: Book; Format: print ; Literary form: Not fiction Publication details: Bangalore: Indian Institute of Science, 2023 Dissertation note: PhD;2023;Centre for Nano Science and Engineering Online access: Click here to access online Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 621.3124 BAB.

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