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	1.	No cover image available Studies on some technologically important deep level traps in gallium arsenide and gallium aluminium arsenide by Mohapatra, Yashowanta N Advised by Kumar, Vikram Material type: Text; Format: print ; Literary form: Not fiction Publication details: Bangalore : Indian Institute of Science, 1988 Dissertation note: PhD;1988;Physics. Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 537.6226 N88.
	2.	No cover image available Study of group 1B impurities in silicon and Gallium arsenide and photoquenching effect of EL2 defect in Gallium arsenide by Pandian, V Advised by Kumar, Vikram Material type: Text; Format: print ; Literary form: Not fiction Publication details: Bangalore : Indian Institute of Science, 1990 Dissertation note: PhD;1990;Physics. Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 537.622 N90.
	3.	No cover image available Space charge transient studies of some deep levels in semiconductors by V. Kalyanaraman. by Kalyanaraman, V Advised by Kumar, Vikram Material type: Text; Format: print ; Literary form: Not fiction Publication details: Bangalore : Indian Institute of Science, 1982 Dissertation note: PhD;1982;Physics. Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 537.622 N82.
	4.	No cover image available Transient capacitance studies of some deep levels in silicon by Sekhar, Indu H Advised by Kumar, Vikram Material type: Text; Format: print ; Literary form: Not fiction Publication details: Bangalore : Indian Institute of Science, 1985 Dissertation note: PhD;1985;Physics. Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 537.622 N85.

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