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Growth of hole-conducting Cu2O & CuO semiconductors using CVD for next-generation electronic devices: thin films transistors, memristors, and gas sensors by
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Bangalore : Indian Institute of Science, 2023
Dissertation note: PhD; 2023; Centre for Nano Science and Engineering
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Availability: Items available for reference: JRD Tata Memorial Library: Not For Loan (1)Call number: 621.3815 SIN.

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Gallium oxide vertical power devices : modeling, material growth, and hetero-epitaxial integration with silicon by
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Bangalore : Indian Institute of Science, 2024
Dissertation note: PhD;2024;Center for Nanoscience and Engineering.
Online resources:
Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 621.38152 MEH.

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Improving efficiency of perovskite and silicon solar cells by reducing surface recombination, bulk recombination, and thermalization losses by
Material type: Text Text; Format: print ; Literary form: Not fiction
Language: en
Publication details: Bangalore : Indian Institute of Science, 2024
Dissertation note: PhD;2024;Center for Nanoscience and Engineering
Online resources:
Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 621.3125 BHA.

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