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	1.	No cover image available Thin films of pure and doped GaN deposited on single crystal substrates by nebulized spray pyrolysis by Kripasindhu Sardar by Sardar, Kripasindhu Advised by Rao, C N R Material type: Text; Format: print ; Literary form: Not fiction Publication details: Bangalore : Indian Institute of Science, 2001 Dissertation note: MSc;2001;Solid State and Structural Chemistry Unit. Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 530.4175 P01.
	2.	Gan-Based Materials and Devices Growth, Fabrication, Characterization and Performance by Shur, M S, Davis, R F Material type: Text Publication details: World Scientific Publishing Company, Incorporated 2004 Availability: Items available for loan: JRD Tata Memorial Library (1)Call number: 621.395 . Place hold
	3.	Gallium nitride electronics by Rudiger Quay by Quay, Rudiger Series: Springer series in materials science Material type: Text Publication details: Berlin Springer 2008 Availability: Items available for loan: Materials Research Centre (1)Call number: 621.31244 P061 (MRC). Place hold
	4.	No cover image available Properties and applications of semiconductor and layered nanomaterials by Basant Chitara by Chitara, Basant Advised by Krupanidhi, S B and Rao, C N R Material type: Text; Format: print ; Literary form: Not fiction Publication details: Bangalore : Indian Institute of Science, 2012 Dissertation note: PhD;2012;Materials Research Centre. Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 537.6223 P12.
	5.	No cover image available Investigation of buffer design and carbon doping in AlGaN/GaN HEMTs for high breakdown voltages by Nayana Remesh; advised by Digbijoy N Nath and Srinivasan Raghavan by Remesh, Nayana, Material type: Text Publication details: Bengaluru IISc 2021 Dissertation note: PhD; IISc; 2021 Online resources: Click here to access online Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 600 NAY/I.
	6.	No cover image available Deeply scaled In AlN/GaN-on-silicon high electron mobility transistors for RF applications by Charan Vanjari, Sai advised by Nath, Digbijoy N and Raghavan, Srinivasan Material type: Text; Format: print ; Literary form: Not fiction Publication details: Bangalore : Indian Institute of Science, 2022 Dissertation note: PhD; 2022; Centre for Nano Science and Engineering Online resources: Click here to access online Availability: Items available for reference: JRD Tata Memorial Library: Not For Loan (1)Call number: 621.381 CHA.
	7.	No cover image available Development and Characterization of Multi-finger GaN HEMT for Power switching applications by Baby, Rijo Advised by Raghavan, Srinivasan Advised by Nath, Digbijoy N Material type: Text; Format: print ; Literary form: Not fiction Publication details: Bangalore: Indian Institute of Science, 2023 Dissertation note: PhD;2023;Centre for Nano Science and Engineering Online resources: Click here to access online Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 621.3124 BAB.
	8.	No cover image available Developing experimental approaches to gain physical insights into high electric field and hot electron reliability of AlGaN/GaN HEMTs by Roy Chaudhuri, Rajashri Advised by Roy Chaudhuri, Rajashri Material type: Text; Format: print ; Literary form: Not fiction Language: en Publication details: Bangalore : Indian Institute of Science, 2024 Dissertation note: PhD;2024;Electronic Systems Engineering. Online resources: Click here to access online Availability: Items available for reference: JRD Tata Memorial Library: Not for loan (1)Call number: 537.62 ROY.

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