Safe Operating Area Reliability of AlGaN/GaN High Electron Mobility Transistors (HEMTs) by Bhawani Shankar ; advised by Mayank Shrivastava
Material type: BookPublication details: Bengaluru Indian Institute of Science 2019Description: xlv, 254 p. illustrations (some colour) 29 cm. C.DSubject(s): DDC classification:- 629 SHA/S
Item type | Current library | Call number | Status | Date due | Barcode |
---|---|---|---|---|---|
Reference | JRD Tata Memorial Library | 629 SHA/S (Browse shelf(Opens below)) | Available | G29562 |
Ph.D. ; Department of Electronic Systems Engineering , Indian Institute of Science ; 2019
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