Investigations of phase change memory properties of selenium doped GeTe and Ge2Sb2Te5 by Vinod E M

By: Contributor(s): Material type: TextTextPublication details: Bangalore : Indian Institute of Science. 2013.Description: xvii, 148 p. : col. illSubject(s): DDC classification:
  • 530.474 P13
Dissertation note: PhD;2013;Physics.
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