Semipolar and Nonpolar Group III-Nitride Heterostructures by Plasma-Assisted Molecular Beam Epitaxy (Record no. 178149)

MARC details
000 -LEADER
fixed length control field 00604nam a2200193Ia 4500
082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.381520154881
Item number P121 "THESIS"
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Rajpalke, Mohana K
245 ## - TITLE STATEMENT
Title Semipolar and Nonpolar Group III-Nitride Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
Remainder of title
Statement of responsibility, etc. by Mohana K Rajpalke
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. Bangalore
Name of publisher, distributor, etc. IISc
Date of publication, distribution, etc. 2012
300 ## - PHYSICAL DESCRIPTION
Extent xix, 147p
490 ## - SERIES STATEMENT
Series statement IISc, Dept of MRC, PhD, Thesis
500 ## - GENERAL NOTE
General note Includes CD
690 ## - LOCAL SUBJECT ADDED ENTRY--TOPICAL TERM (OCLC, RLIN)
Topical term or geographic name as entry element Nitride Semiconductors; Molecular beam epitaxy; Semiconductors, group III-nitride; Fabrication devices
919 ## -
-- 190754

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