Semipolar and Nonpolar Group III-Nitride Heterostructures by Plasma-Assisted Molecular Beam Epitaxy (Record no. 178149)
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000 -LEADER | |
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fixed length control field | 00604nam a2200193Ia 4500 |
082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER | |
Classification number | 621.381520154881 |
Item number | P121 "THESIS" |
100 ## - MAIN ENTRY--PERSONAL NAME | |
Personal name | Rajpalke, Mohana K |
245 ## - TITLE STATEMENT | |
Title | Semipolar and Nonpolar Group III-Nitride Heterostructures by Plasma-Assisted Molecular Beam Epitaxy |
Remainder of title | |
Statement of responsibility, etc. | by Mohana K Rajpalke |
260 ## - PUBLICATION, DISTRIBUTION, ETC. | |
Place of publication, distribution, etc. | Bangalore |
Name of publisher, distributor, etc. | IISc |
Date of publication, distribution, etc. | 2012 |
300 ## - PHYSICAL DESCRIPTION | |
Extent | xix, 147p |
490 ## - SERIES STATEMENT | |
Series statement | IISc, Dept of MRC, PhD, Thesis |
500 ## - GENERAL NOTE | |
General note | Includes CD |
690 ## - LOCAL SUBJECT ADDED ENTRY--TOPICAL TERM (OCLC, RLIN) | |
Topical term or geographic name as entry element | Nitride Semiconductors; Molecular beam epitaxy; Semiconductors, group III-nitride; Fabrication devices |
919 ## - | |
-- | 190754 |
No items available.