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Physics-based approach for efficient & reliable enhancement-mode AlGaN/GaN high electron mobility transistor (HEMT) technology

Dutta Gupta, Sayak

Physics-based approach for efficient & reliable enhancement-mode AlGaN/GaN high electron mobility transistor (HEMT) technology by Sayak Dutta Gupta; advised by Mayank Shrivastava - Bengaluru IISc 2022 - xxxix, 237p.

includes bibliographic reference and index

PhD; IISc; 2022

Subjects--Topical Terms:
High Electron Mobility Transistor (HEMT)
semiconductor devices
Enhancement Mode HEMTs

Dewey Class. No.: 620 / SAY/P

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