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InGaN based 2D, 1D and 0D heterostructures on Si (111) by plasma assisted molecular beam epitaxy

Chandan K. Greeshma

InGaN based 2D, 1D and 0D heterostructures on Si (111) by plasma assisted molecular beam epitaxy by Greeshma, Chandan K. - Bangalore IISc 2017 - xv, 153p.

Includes CD IISc, Dept of MaT, PhD Thesis

Subjects--Index Terms: 1D and 0D heterostructures

Dewey Class. No.: 621.044 / P17 (THESIS)

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